FQP65N06

Part NoFQP65N06

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 65A TO-220

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±25V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-220AB

SeriesQFET®

Rds On (Max) @ Id, Vgs16 mOhm @ 32.5A, 10V

Power Dissipation (Max)150W (Tc)

PackagingTube

Package / CaseTO-220-3

Other NamesFQP65N06-ND FQP65N06FS

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Manufacturer Standard Lead Time7 Weeks

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds2410pF @ 25V

Gate Charge (Qg) (Max) @ Vgs65nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)60V

Detailed DescriptionN-Channel 60V 65A (Tc) 150W (Tc) Through Hole TO-220AB

Current - Continuous Drain (Id) @ 25°C65A (Tc)

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