FQP9N50C

Part NoFQP9N50C

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 500V 9A TO-220

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±30V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-220-3

SeriesQFET®

Rds On (Max) @ Id, Vgs800 mOhm @ 4.5A, 10V

Power Dissipation (Max)135W (Tc)

PackagingTube

Package / CaseTO-220-3

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V

Gate Charge (Qg) (Max) @ Vgs35nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)500V

Detailed DescriptionN-Channel 500V 9A (Tc) 135W (Tc) Through Hole TO-220-3

Current - Continuous Drain (Id) @ 25°C9A (Tc)

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