HUFA76629D3

Part NoHUFA76629D3

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 20A IPAK

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Specification

Vgs(th) (Max) @ Id3V @ 250µA

Vgs (Max)±16V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-251AA

SeriesUltraFET™

Rds On (Max) @ Id, Vgs52 mOhm @ 20A, 10V

Power Dissipation (Max)110W (Tc)

PackagingTube

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1285pF @ 25V

Gate Charge (Qg) (Max) @ Vgs46nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Drain to Source Voltage (Vdss)100V

Detailed DescriptionN-Channel 100V 20A (Tc) 110W (Tc) Through Hole TO-251AA

Current - Continuous Drain (Id) @ 25°C20A (Tc)

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