MUN2212T1G

MUN2212T1G

Part NoMUN2212T1G
ManufacturerON Semiconductor
DescriptionTransistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 22kO
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ECAD Module MUN2212T1G
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Specification
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Transistor TypeNPN - Pre-Biased
Supplier Device PackageSC-59
Series-
Resistor - Emitter Base (R2)22 kOhms
Resistor - Base (R1)22 kOhms
Power - Max338mW
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Other NamesMUN2212T1GOS MUN2212T1GOS-ND MUN2212T1GOSTR
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time10 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Current - Collector Cutoff (Max)500nA
Current - Collector (Ic) (Max)100mA
Base Part NumberMUN2212
In Stock: 18670
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.1548
10 0.1517
100 0.1471
1000 0.1424
10000 0.1362
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product