MUR120G
Part NoMUR120G
ManufacturerON Semiconductor
DescriptionDIODE GEN PURP 200V 1A AXIAL
Datasheet
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ECAD Module
Specification
Voltage - Forward (Vf) (Max) @ If875mV @ 1A
Voltage - DC Reverse (Vr) (Max)200V
Supplier Device PackageAxial
SpeedFast Recovery = 200mA (Io)
SeriesSWITCHMODE™
Reverse Recovery Time (trr)35ns
PackagingBulk
Package / CaseDO-204AL, DO-41, Axial
Other NamesMUR120G-ND
MUR120GOS
Operating Temperature - Junction-65°C ~ 175°C
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time44 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Diode TypeStandard
Detailed DescriptionDiode Standard 200V 1A Through Hole Axial
Current - Reverse Leakage @ Vr2µA @ 200V
Current - Average Rectified (Io)1A
Capacitance @ Vr, F-
Base Part NumberMUR120
In Stock:
24245
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5265 | |
| 10 | 0.516 | |
| 100 | 0.5002 | |
| 1000 | 0.4844 | |
| 10000 | 0.4633 |
Associated Product
FDG6332C
ON Semiconductor
ON SEMICONDUCTOR - FDG6332C - Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
ON Semiconductor
ON SEMICONDUCTOR - FDG6332C - Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
