NTD32N06T4G

Part NoNTD32N06T4G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 32A DPAK

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageDPAK

Series-

Rds On (Max) @ Id, Vgs26 mOhm @ 16A, 10V

Power Dissipation (Max)1.5W (Ta), 93.75W (Tj)

PackagingTape & Reel (TR)

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Other NamesNTD32N06T4GOS

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1725pF @ 25V

Gate Charge (Qg) (Max) @ Vgs60nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)60V

Detailed DescriptionN-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK

Current - Continuous Drain (Id) @ 25°C32A (Ta)

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