NTD4959N-1G

Part NoNTD4959N-1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 9A IPAK

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ECAD Module

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Specification

Vgs(th) (Max) @ Id2.5V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageI-PAK

Series-

Rds On (Max) @ Id, Vgs9 mOhm @ 30A, 10V

Power Dissipation (Max)1.3W (Ta), 52W (Tc)

PackagingTube

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1456pF @ 12V

Gate Charge (Qg) (Max) @ Vgs25nC @ 11.5V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V

Drain to Source Voltage (Vdss)30V

Detailed DescriptionN-Channel 30V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-PAK

Current - Continuous Drain (Id) @ 25°C9A (Ta), 58A (Tc)

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