NTJD4105CT2G
Part NoNTJD4105CT2G
ManufacturerON Semiconductor
DescriptionMOSFET N/P-CH 20V/8V SOT-363
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-88/SC70-6/SOT-363
Series-
Rds On (Max) @ Id, Vgs375 mOhm @ 630mA, 4.5V
Power - Max270mW
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Other NamesNTJD4105CT2G-ND
NTJD4105CT2GOSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time46 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V, 8V
Detailed DescriptionMosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Current - Continuous Drain (Id) @ 25°C630mA, 775mA
Base Part NumberNTJD4105C
In Stock:
35511
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4326 | |
| 10 | 0.4239 | |
| 100 | 0.411 | |
| 1000 | 0.398 | |
| 10000 | 0.3807 |
Associated Product
FF650R17IE4D_B2
Infineon
INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
Infineon
INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
