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NTMFS4C06NBT1G
Part NoNTMFS4C06NBT1G
ManufacturerON Semiconductor
DescriptionMOSFET N-CH 30V 20A 69A 5DFN
Datasheet
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Specification
Vgs(th) (Max) @ Id2.1V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package5-DFN (5x6) (8-SOFL)
Series-
Rds On (Max) @ Id, Vgs4 mOhm @ 30A, 10V
Power Dissipation (Max)2.55W (Ta), 30.5W (Tc)
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time42 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1683pF @ 15V
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 20A (Ta), 69A (Tc) 2.55W (Ta), 30.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C20A (Ta), 69A (Tc)
In Stock:
16604
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.3674 | |
10 | 1.3401 | |
100 | 1.299 | |
1000 | 1.258 | |
10000 | 1.2033 |
Associated Product
![AUIRF2805STRR](/media/nopic.jpg)
AUIRF2805STRR
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3