NTMS5835NLR2G

Part NoNTMS5835NLR2G

ManufacturerON Semiconductor

DescriptionMOSFET NFET SO8-S 40V 10mOHM

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Specification

Vgs(th) (Max) @ Id3V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package8-SOIC

Series-

Rds On (Max) @ Id, Vgs10 mOhm @ 10A, 10V

Power Dissipation (Max)1.5W (Ta)

PackagingTape & Reel (TR)

Package / Case8-SOIC (0.154", 3.90mm Width)

Other NamesNTMS5835NLR2G-ND NTMS5835NLR2GOSTR

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds2115pF @ 20V

Gate Charge (Qg) (Max) @ Vgs50nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Drain to Source Voltage (Vdss)40V

Detailed DescriptionN-Channel 40V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Current - Continuous Drain (Id) @ 25°C9.2A (Ta)

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