NVATS5A112PLZT4G

Part NoNVATS5A112PLZT4G

ManufacturerON Semiconductor

DescriptionMOSFET P-CHANNEL 60V 27A ATPAK

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Specification

Vgs(th) (Max) @ Id2.6V @ 1mA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageATPAK

Series-

Rds On (Max) @ Id, Vgs43 mOhm @ 13A, 10V

Power Dissipation (Max)48W (Tc)

PackagingTape & Reel (TR)

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Other NamesNVATS5A112PLZT4G-ND NVATS5A112PLZT4GOSTR

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Manufacturer Standard Lead Time10 Weeks

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1450pF @ 20V

Gate Charge (Qg) (Max) @ Vgs33.5nC @ 10V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4V, 10V

Drain to Source Voltage (Vdss)60V

Detailed DescriptionP-Channel 60V 27A (Ta) 48W (Tc) Surface Mount ATPAK

Current - Continuous Drain (Id) @ 25°C27A (Ta)

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