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RD0106T-H
Part NoRD0106T-H
ManufacturerON Semiconductor
DescriptionDIODE GEN PURP 600V 1A TP
Datasheet
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Specification
Voltage - Forward (Vf) (Max) @ If1.3V @ 1A
Voltage - DC Reverse (Vr) (Max)600V
Supplier Device PackageTP
SpeedFast Recovery = 200mA (Io)
Series-
Reverse Recovery Time (trr)50ns
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature - Junction150°C (Max)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Diode TypeStandard
Detailed DescriptionDiode Standard 600V 1A Through Hole TP
Current - Reverse Leakage @ Vr10µA @ 600V
Current - Average Rectified (Io)1A
Capacitance @ Vr, F-
In Stock:
6180
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.17 | |
10 | 0.1666 | |
100 | 0.1615 | |
1000 | 0.1564 | |
10000 | 0.1496 |