AOT8N65

AOT8N65

Part NoAOT8N65
DescriptionMOSFET N-CH 650V 8A TO220
Datasheet Download Now!
ECAD Module AOT8N65
Get Quotation Now!
Specification
Vgs(th) (Max) @ Id4.5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220
Series-
Rds On (Max) @ Id, Vgs1.15 Ohm @ 4A, 10V
Power Dissipation (Max)208W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time26 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)650V
Detailed DescriptionN-Channel 650V 8A (Tc) 208W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C8A (Tc)
In Stock: 16200
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product