IRF640S

Part NoIRF640S

ManufacturerVishay

DescriptionMOSFET N-CH 200V 18A D2PAK

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageD2PAK

Series-

Rds On (Max) @ Id, Vgs180 mOhm @ 11A, 10V

Power Dissipation (Max)3.1W (Ta), 130W (Tc)

PackagingTube

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusContains lead / RoHS non-compliant

Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs70nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)200V

Detailed DescriptionN-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D2PAK

Current - Continuous Drain (Id) @ 25°C18A (Tc)

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