SI1012R-T1-E3

SI1012R-T1-E3

Part NoSI1012R-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 20V 500MA SC-75A
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ECAD Module SI1012R-T1-E3
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Specification
RoHSCompliant
MountSurface Mount
Width760 µm
Height700 µm
Length1.58 mm
Fall Time5 ns
Lead FreeLead Free
Rise Time5 ns
REACH SVHCNo SVHC
Rds On Max700 mΩ
Case/PackageSC
Number of Pins3
Power Dissipation150 mW
Threshold Voltage800 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation150 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance850 mΩ
Gate to Source Voltage (Vgs)6 V
Continuous Drain Current (ID)500 mA
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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