SI1026X-T1-GE3
Part NoSI1026X-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 60V 0.305A SC89-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.2 mm
Height600 µm
Length1.7 mm
Weight32.006612 mg
Lead FreeLead Free
PackagingDigi-Reel®
REACH SVHCUnknown
Rds On Max1.4 Ω
Resistance3 Ω
Schedule B8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
Case/PackageSC
Number of Pins6
Input Capacitance30 pF
Power Dissipation250 mW
Threshold Voltage2.5 V
Number of Channels2
Number of Elements2
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationDual
Max Power Dissipation250 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.4 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)305 mA
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
18866
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.588 | |
| 10 | 0.5762 | |
| 100 | 0.5586 | |
| 1000 | 0.541 | |
| 10000 | 0.5174 |
Associated Product
