SI1965DH-T1-GE3
Part NoSI1965DH-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2P-CH 12V 1.3A SC70-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Weight28.009329 mg
Fall Time10 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time27 ns
REACH SVHCUnknown
Rds On Max390 mΩ
Resistance390 mΩ
Schedule B8541210080
Nominal Vgs-400 mV
Case/PackageSC
Number of Pins6
Input Capacitance120 pF
Power Dissipation740 mW
Number of Channels2
Number of Elements2
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationDual
Max Power Dissipation1.25 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance390 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)1.14 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V
In Stock:
16372
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5341 | |
| 10 | 0.5234 | |
| 100 | 0.5074 | |
| 1000 | 0.4914 | |
| 10000 | 0.47 |
Associated Product
