SI2306BDS-T1-E3
Part NoSI2306BDS-T1-E3
ManufacturerVISHAY
DescriptionST
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time12 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max47 mΩ
Resistance47 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance305 pF
Power Dissipation1.25 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time14 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance38 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.16 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
31993
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.624 | |
| 10 | 0.6115 | |
| 100 | 0.5928 | |
| 1000 | 0.5741 | |
| 10000 | 0.5491 |
Associated Product
HUF76423D3ST
Fairchild Semiconductor
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Fairchild Semiconductor
Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
