SI2307CDS-T1-GE3
Part NoSI2307CDS-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 3.5A SOT23-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time40 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time40 ns
REACH SVHCUnknown
Rds On Max88 mΩ
Resistance88 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance340 pF
Power Dissipation1.1 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time5.5 ns
Radiation HardeningNo
Turn-Off Delay Time17 ns
Element ConfigurationSingle
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance73 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-2.7 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
In Stock:
44898
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4018 | |
| 10 | 0.3938 | |
| 100 | 0.3817 | |
| 1000 | 0.3697 | |
| 10000 | 0.3536 |
Associated Product
