SI2325DS-T1-E3
Part NoSI2325DS-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 150V 0.53A SOT23-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Lead FreeLead Free
PackagingCut Tape (CT)
REACH SVHCNo SVHC
Rds On Max1.2 Ω
Resistance1.2 Ω
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23-3
Number of Pins3
Contact PlatingTin
Input Capacitance510 pF
Power Dissipation750 mW
Threshold Voltage-4.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-530 mA
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-150 V
Drain to Source Breakdown Voltage-150 V
In Stock:
46128
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7954 | |
| 10 | 0.7795 | |
| 100 | 0.7556 | |
| 1000 | 0.7318 | |
| 10000 | 0.7 |
Associated Product
