SI3447BDV-T1-E3
Part NoSI3447BDV-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 12V 4.5A 6-TSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3 mm
Height990.6 µm
Length3.0988 mm
Fall Time46 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time46 ns
REACH SVHCUnknown
Rds On Max40 mΩ
Resistance53 mΩ
Nominal Vgs-1 V
TerminationSMD/SMT
Case/PackageTSOP
Number of Pins6
Power Dissipation1.1 W
Threshold Voltage-1 V
Number of Elements1
Turn-On Delay Time20 ns
Dual Supply Voltage-12 V
Radiation HardeningNo
Turn-Off Delay Time62 ns
Element ConfigurationSingle
Max Power Dissipation1.1 W
Reverse Recovery Time40 ns
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance40 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.5 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V
In Stock:
18179
available for immediate sale in a store
available for immediate sale in a store
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Associated Product
