![SI3493BDV-T1-GE3](/media/Discrete%20Semiconductor%20Products/Transistors/742%257e5540%257eDV%252c-EV%257e6.jpg)
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SI3493BDV-T1-GE3
Part NoSI3493BDV-T1-GE3
ManufacturerVISHAY
DescriptionTSOP-6
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time84 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time72 ns
Rds On Max27.5 mΩ
Resistance27.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance1.805 nF
Power Dissipation2.08 W
Number of Channels1
Number of Elements1
Turn-On Delay Time22 ns
Radiation HardeningNo
Turn-Off Delay Time75 ns
Element ConfigurationSingle
Max Power Dissipation2.97 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance27.5 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)7 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
18907
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.9108 | |
10 | 0.8926 | |
100 | 0.8653 | |
1000 | 0.8379 | |
10000 | 0.8015 |