SI3590DV-T1-GE3
Part NoSI3590DV-T1-GE3
ManufacturerVishay
DescriptionMOSFET N/P-CH 30V 2.5A 6-TSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.1 mm
Weight19.986414 mg
Lead FreeLead Free
PackagingCut Tape
REACH SVHCNo SVHC
Rds On Max77 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Nominal Vgs1.5 V
Case/PackageTSOP
Number of Pins6
Power Dissipation830 mW
Threshold Voltage1.5 V
Number of Channels2
Number of Elements2
Turn-On Delay Time5 ns
Radiation HardeningNo
Max Power Dissipation830 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance135 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)2.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
17787
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8874 | |
| 10 | 0.8697 | |
| 100 | 0.843 | |
| 1000 | 0.8164 | |
| 10000 | 0.7809 |
Associated Product
