SI4100DY-T1-E3
Part NoSI4100DY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 6.8A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
Rds On Max63 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Contact PlatingTin
Input Capacitance600 pF
Power Dissipation2.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance63 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)4.4 A
Drain to Source Voltage (Vdss)100 V
In Stock:
15260
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1811 | |
| 10 | 1.1575 | |
| 100 | 1.122 | |
| 1000 | 1.0866 | |
| 10000 | 1.0394 |
Associated Product
