SI4156DY-T1-GE3
Part NoSI4156DY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 24A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Fall Time15 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max6 mΩ
Resistance6 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance1.7 nF
Power Dissipation2.5 W
Threshold Voltage2.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)24 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
21878
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.828 | |
| 10 | 0.8114 | |
| 100 | 0.7866 | |
| 1000 | 0.7618 | |
| 10000 | 0.7286 |
Associated Product
