SI4477DY-T1-GE3
Part NoSI4477DY-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 26.6A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time42 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time42 ns
REACH SVHCNo SVHC
Rds On Max6.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Contact PlatingTin
Input Capacitance4.6 nF
Power Dissipation3 W
Threshold Voltage-1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time42 ns
Radiation HardeningNo
Turn-Off Delay Time100 ns
Max Power Dissipation3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance6.2 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-26.6 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
22046
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.316 | |
| 10 | 1.2897 | |
| 100 | 1.2502 | |
| 1000 | 1.2107 | |
| 10000 | 1.1581 |
Associated Product
