SI4532CDY-T1-GE3

SI4532CDY-T1-GE3

Part NoSI4532CDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET N/P-CH 30V 6A 8-SOIC
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ECAD Module SI4532CDY-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time7.7 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time13 ns
REACH SVHCUnknown
Rds On Max47 mΩ
Resistance89 mΩ
Schedule B8541290080
Nominal Vgs1 V
Case/PackageSOIC
Number of Pins8
Input Capacitance305 pF
Power Dissipation1.78 W
Threshold Voltage1 V
Number of Channels2
Number of Elements2
Turn-On Delay Time5.5 ns
Radiation HardeningNo
Turn-Off Delay Time17 ns
Max Power Dissipation2.78 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance73 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock: 20804
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.693
10 0.6791
100 0.6583
1000 0.6376
10000 0.6098
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product