SI4836DY-T1-E3
Part NoSI4836DY-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 12V 17A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time115 ns
Lead FreeLead Free
Rise Time41 ns
Rds On Max300 mΩ
Resistance3 mΩ
Case/PackageSOIC N
Number of Pins8
Contact PlatingTin
Input Capacitance860 pF
Power Dissipation1.6 W
Number of Elements1
Turn-On Delay Time35 ns
Radiation HardeningNo
Turn-Off Delay Time190 ns
Element ConfigurationSingle
Max Power Dissipation3.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)17 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage12 V
In Stock:
15261
available for immediate sale in a store
available for immediate sale in a store
Pricing
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Associated Product
IR21365STRPBF
Infineon
3 Phase Driver, Separate High And Low Side Inputs, 28-LEAD SOIC | Infineon IR21365SPBF
Infineon
3 Phase Driver, Separate High And Low Side Inputs, 28-LEAD SOIC | Infineon IR21365SPBF
