SI5515DC-T1-E3

Part NoSI5515DC-T1-E3

ManufacturerVishay

DescriptionMOSFET N/P-CH 20V 4.4A 1206-8

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Specification

Vgs(th) (Max) @ Id1V @ 250µA

Supplier Device Package1206-8 ChipFET™

SeriesTrenchFET®

Rds On (Max) @ Id, Vgs40 mOhm @ 4.4A, 4.5V

Power - Max1.1W

PackagingTape & Reel (TR)

Package / Case8-SMD, Flat Lead

Other NamesSI5515DC-T1-E3TR SI5515DCT1E3

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds-

Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V

FET TypeN and P-Channel

FET FeatureLogic Level Gate

Drain to Source Voltage (Vdss)20V

Detailed DescriptionMosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™

Current - Continuous Drain (Id) @ 25°C4.4A, 3A

Base Part NumberSI5515

In Stock: 18107
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