SI5913DC-T1-E3
Part NoSI5913DC-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 4A 1206-8
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1.1 mm
Length3.05 mm
Weight84.99187 mg
Fall Time40 ns
Rise Time40 ns
Rds On Max84 mΩ
Case/PackageSMD/SMT
Number of Pins8
Input Capacitance330 pF
Number of Channels1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time18 ns
Max Power Dissipation3.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance84 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)3.7 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
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available for immediate sale in a store
available for immediate sale in a store
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