SI7112DN-T1-E3
Part NoSI7112DN-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 11.3A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Lead FreeLead Free
Rise Time10 ns
Rds On Max7.5 mΩ
Resistance7.5 mΩ
Number of Pins8
Input Capacitance2.61 nF
Power Dissipation1.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time65 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.5 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)11.3 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
16674
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3608 | |
| 10 | 1.3336 | |
| 100 | 1.2928 | |
| 1000 | 1.2519 | |
| 10000 | 1.1975 |
Associated Product
