SI7113DN-T1-GE3
Part NoSI7113DN-T1-GE3
ManufacturerVISHAY
DescriptionST
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.3 mm
Height1.04 mm
Length3.3 mm
Fall Time40 ns
Rise Time110 ns
REACH SVHCUnknown
Rds On Max134 mΩ
Resistance134 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance1.48 nF
Power Dissipation3.7 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time42 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance108 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-3.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-100 V
Drain to Source Breakdown Voltage-100 V
In Stock:
32073
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.68 | |
| 10 | 1.6464 | |
| 100 | 1.596 | |
| 1000 | 1.5456 | |
| 10000 | 1.4784 |
Associated Product
