SI7115DN-T1-GE3
Part NoSI7115DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 150V 8.9A 1212-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time35 ns
Lead FreeLead Free
Rise Time28 ns
REACH SVHCUnknown
Rds On Max295 mΩ
Resistance295 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-2 V
Number of Pins8
Contact PlatingTin
Input Capacitance1.19 nF
Power Dissipation3.7 W
Threshold Voltage-2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time52 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance295 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.3 A
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage-150 V
In Stock:
46586
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0 | |
| 10 | 1.96 | |
| 100 | 1.9 | |
| 1000 | 1.84 | |
| 10000 | 1.76 |
Associated Product
