SI7117DN-T1-E3
Part NoSI7117DN-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 150V 2.17A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time11 ns
Lead FreeLead Free
Rise Time11 ns
Rds On Max1.2 Ω
Resistance1.2 Ω
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Number of Pins8
Input Capacitance510 pF
Power Dissipation3.2 W
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation12.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.2 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)1.1 A
Drain to Source Voltage (Vdss)150 V
In Stock:
18384
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3335 | |
| 10 | 1.3068 | |
| 100 | 1.2668 | |
| 1000 | 1.2268 | |
| 10000 | 1.1735 |
Associated Product
