SI7120ADN-T1-GE3
Part NoSI7120ADN-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 6A 1212-8 PPAK
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max21 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation3.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance21 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)9.5 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
18265
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.616 | |
| 10 | 1.5837 | |
| 100 | 1.5352 | |
| 1000 | 1.4867 | |
| 10000 | 1.4221 |
Associated Product
DSPIC33FJ128MC710-I/PT
Microchip
MCU - 16-bit dsPIC - 128KB Flash - 16KB RAM - -40°C to +85°C - 3.3V - 100-Pin TQFP - Tray
Microchip
MCU - 16-bit dsPIC - 128KB Flash - 16KB RAM - -40°C to +85°C - 3.3V - 100-Pin TQFP - Tray
