![SI7216DN-T1-GE3](/media/Discrete%20Semiconductor%20Products/Transistors/742%253b5882-Dual%253bDN%253b8.jpg)
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time5 ns
Lead FreeLead Free
Rise Time57 ns
REACH SVHCUnknown
Rds On Max32 mΩ
Resistance39 mΩ
Schedule B8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance670 pF
Power Dissipation2.5 W
Threshold Voltage3 V
Number of Channels2
Number of Elements2
Turn-On Delay Time9 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationDual
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance32 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)6.5 A
Drain to Source Voltage (Vdss)40 V
In Stock:
16725
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.488 | |
10 | 1.4582 | |
100 | 1.4136 | |
1000 | 1.369 | |
10000 | 1.3094 |