SI7430DP-T1-GE3
Part NoSI7430DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 150V 26A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time7 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max45 mΩ
Resistance45 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance1.735 nF
Power Dissipation5.2 W
Threshold Voltage4.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation5.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance45 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.2 A
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage150 V
In Stock:
37508
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.529 | |
| 10 | 2.4784 | |
| 100 | 2.4025 | |
| 1000 | 2.3267 | |
| 10000 | 2.2255 |
Associated Product
