SI7454DDP-T1-GE3
Part NoSI7454DDP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 21A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.26 mm
Height1.12 mm
Length6.25 mm
Fall Time9 ns
Lead FreeLead Free
Rise Time13 ns
REACH SVHCUnknown
Rds On Max33 mΩ
Resistance33 MΩ
Schedule B8541290080
Case/PackageSO
Number of Pins8
Input Capacitance550 pF
Power Dissipation4.1 W
Threshold Voltage1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation29.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance33 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)21 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock:
15071
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.485 | |
| 10 | 1.4553 | |
| 100 | 1.4107 | |
| 1000 | 1.3662 | |
| 10000 | 1.3068 |
Associated Product
