SI7613DN-T1-GE3
Part NoSI7613DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 35A 1212-8 PPAK
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time9 ns
Rise Time7 ns
REACH SVHCUnknown
Rds On Max8.7 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance2.62 nF
Power Dissipation3.8 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time42 ns
Max Power Dissipation52.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.7 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)17 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
17757
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0506 | |
| 10 | 1.0296 | |
| 100 | 0.9981 | |
| 1000 | 0.9666 | |
| 10000 | 0.9245 |
Associated Product
