SI7810DN-T1-E3
Part NoSI7810DN-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 3.4A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max62 mΩ
Resistance62 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs4.5 V
Number of Pins8
Power Dissipation1.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance62 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.4 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock:
16747
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.653 | |
| 10 | 1.6199 | |
| 100 | 1.5703 | |
| 1000 | 1.5208 | |
| 10000 | 1.4546 |
Associated Product
