SI9926CDY-T1-GE3
Part NoSI9926CDY-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 20V 8A 8-SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max18 mΩ
Resistance18 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance1.2 nF
Power Dissipation2 W
Threshold Voltage1.5 V
Number of Channels2
Number of Elements2
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationDual
Max Power Dissipation3.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance15 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
In Stock:
23467
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.071 | |
| 10 | 1.0496 | |
| 100 | 1.0175 | |
| 1000 | 0.9853 | |
| 10000 | 0.9425 |
Associated Product
