SIR872ADP-T1-GE3
Part NoSIR872ADP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 150V 53.7A PPAK SO-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time7 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max18 mΩ
Resistance18 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance1.286 nF
Power Dissipation6.25 W
Threshold Voltage4.5 V
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)53.7 A
Drain to Source Voltage (Vdss)150 V
In Stock:
19752
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4878 | |
| 10 | 1.458 | |
| 100 | 1.4134 | |
| 1000 | 1.3688 | |
| 10000 | 1.3093 |
Associated Product
