SIRA10DP-T1-GE3
Part NoSIRA10DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.26 mm
Height1.12 mm
Length6.25 mm
Weight506.605978 mg
Fall Time20 ns
REACH SVHCUnknown
Rds On Max3.7 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Contact PlatingTin
Input Capacitance2.425 nF
Power Dissipation5 W
Threshold Voltage1.1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time27 ns
Element ConfigurationSingle
Max Power Dissipation40 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
21679
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.09 | |
| 10 | 1.0682 | |
| 100 | 1.0355 | |
| 1000 | 1.0028 | |
| 10000 | 0.9592 |
Associated Product
