SIS412DN-T1-GE3
Part NoSIS412DN-T1-GE3
ManufacturerVISHAY
DescriptionSOT23-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max24 mΩ
Resistance24 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1 V
Number of Pins8
Input Capacitance435 pF
Power Dissipation3.2 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Max Power Dissipation15.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8.7 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
34193
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5472 | |
| 10 | 0.5363 | |
| 100 | 0.5198 | |
| 1000 | 0.5034 | |
| 10000 | 0.4815 |
Associated Product
