SIS413DN-T1-GE3
Part NoSIS413DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 18A PPAK 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.17 mm
Fall Time8 ns
PackagingDigi-Reel®
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max9.4 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance4.28 nF
Power Dissipation3.7 W
Threshold Voltage-2.5 V
Number of Channels1
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-18 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
In Stock:
22974
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6783 | |
| 10 | 0.6647 | |
| 100 | 0.6444 | |
| 1000 | 0.624 | |
| 10000 | 0.5969 |
Associated Product
