SISS27DN-T1-GE3
Part NoSISS27DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 50A PPAK 1212-8S
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height830 µm
Fall Time20 ns
PackagingDigi-Reel®
Rise Time45 ns
Rds On Max5.6 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance5.25 nF
Power Dissipation4.8 W
Number of Channels1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation57 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance4.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-23 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
In Stock:
16923
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7533 | |
| 10 | 0.7382 | |
| 100 | 0.7156 | |
| 1000 | 0.693 | |
| 10000 | 0.6629 |
Associated Product
DSPIC33FJ256MC510-I/PT
Microchip
MCU - 16-bit dsPIC - 256KB Flash - 16KB RAM - -40°C to +85°C - 3.3V - 100-Pin TQFP - Tray
Microchip
MCU - 16-bit dsPIC - 256KB Flash - 16KB RAM - -40°C to +85°C - 3.3V - 100-Pin TQFP - Tray
