SQJ464EP-T1_GE3
Part NoSQJ464EP-T1_GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 32A POWERPAKSO-8
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePowerPAK® SO-8
Series-
Rds On (Max) @ Id, Vgs17 mOhm @ 7.1A, 10V
Power Dissipation (Max)45W (Tc)
PackagingOriginal-Reel®
Package / CasePowerPAK® SO-8
Other NamesSQJ464EP-T1_GE3DKR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Input Capacitance (Ciss) (Max) @ Vds2086pF @ 30V
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C32A (Tc)
In Stock:
15038
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8148 | |
| 10 | 0.7985 | |
| 100 | 0.7741 | |
| 1000 | 0.7496 | |
| 10000 | 0.717 |
Associated Product
