SQJ469EP-T1_GE3
Part NoSQJ469EP-T1_GE3
ManufacturerVishay
DescriptionMOSFET P-CH 80V 32A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.267 mm
Weight506.605978 mg
Fall Time40 ns
Rise Time16 ns
REACH SVHCUnknown
Rds On Max25 mΩ
Nominal Vgs-2 V
Number of Pins8
Input Capacitance5.1 nF
Power Dissipation100 W
Threshold Voltage-2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time150 ns
Element ConfigurationSingle
Max Power Dissipation100 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance25 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-32 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)-80 V
Drain to Source Breakdown Voltage-80 V
In Stock:
16601
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.94 | |
| 10 | 2.8812 | |
| 100 | 2.793 | |
| 1000 | 2.7048 | |
| 10000 | 2.5872 |
Associated Product
