BSDH10G65E2
Part NoBSDH10G65E2
ManufacturerBourns Inc.
DescriptionDIODE SIC 650V 10A TO220-2
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)10A
Voltage-Forward(Vf)(Max)@IfFast Recovery =< 500ns, > 200mA (Io)
Speed50 µA @ 650 V
ReverseRecoveryTime(trr)323pF @ 1V, 1MHz
Current-ReverseLeakage@VrThrough Hole
Capacitance@VrTO-220-2
FTO-220-2
MountingType-55°C ~ 175°C
Package/Case1.7 V @ 10 A
SupplierDevicePackage-
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
11175
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.381 | |
| 10 | 3.3134 | |
| 100 | 3.2119 | |
| 1000 | 3.1105 | |
| 10000 | 2.9753 |
Associated Product
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