CP406-CWDM3011N-WN
Part NoCP406-CWDM3011N-WN
ManufacturerCentral Semiconductor Corp
DescriptionMOSFET N-CH 11A 30V BARE DIE
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C9.93A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)13mOhm @ 1A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id-
Vgs(Max)1.15W (Ta)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)Die
OperatingTemperatureDie
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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Associated Product
